Product
Introduction

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Laser Annealing(IGBT)

SWA-20US

The SUMITOMO SWA-20US is a high performance laser annealer for precise temperature control and high-speed processing in semiconductor and electronic device manufacturing.

Feature
Precise control of the laser allows only specific parts of the material to be heated, minimizing thermal damage
Laser heating and cooling is extremely fast, reducing the overall process time
The high temperature treatment improves the crystal structure and enhances the time and physical properties of the material
The intensity, position and time of the laser can be precisely controlled to achieve highly consistent results
The laser operates in a non-contact manner, allowing processing without mechanical stress or contamination
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Detailed Specification

UV Laser Annealing

Laser annealing is a process in which a laser is used to rapidly and precisely heat a specific area of a material, followed by rapid cooling.
This technique is widely used in the semiconductor industry to improve the electrical properties of materials by controlling impurity diffusion and recrystallisation.

SWA-20US

Laser anneal system for next generation power device.
It is used to create and activate SIC ohmic contacts.

By suppressing the temperature rise of the non-irradiated surface and heating
the metal-SIC interface to a high temperature, OPTSWING creates an O’mic contact.

Annealing of the SIC wafer is used to silicide the backside electrode.
*Note: In Si-IGBT, it is widely used to activate impurities injected on the backside.