Product
Introduction
Detailed Specification
Life Time control of Power Device
| Ion Particles | Energy (MeV) | Si Range (um) | Si FWHM (um) |
|---|---|---|---|
| Proton | 2 | 44 | 3 |
| 4 | 163 | 8 | |
| 8 | 472 | 472 | |
| Helium-3 | 23 | 351 | 8 |
| Helium-4 | 3 | 13 | 1 |
| 17 | 165 | 4 |
n-layer formation by Hydrogen ION Beam injection
NPT + Planar Type
~180μm
Helium Implantation for Lifetime Control
FS Type + Trench
~150μm
Backside structure enlargement :
Thin layer n+layer by Phosphorus Implant
n+ Buffer type
~120μm
Formation n+buffer layer on backside
by Proton Irradiation proceed